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hexfet ? chip-set for dc-dc converters top view 8 1 2 3 4 5 6 7 d d d d g s a s s absolute maximum ratings parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t a = 25c power dissipation w p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and c t stg storage temperature range thermal resistance parameter typ. max. units r ??? 20 c/w r ??? 50 max. 13 10 100 12 30 -55 to + 150 2.5 0.02 1.6
so-8 features benefits industry-standard pinout so-8 package ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability v ds 30 v r ds(on) max (@v gs = 4.5v) 11 m q g (typical) 22 nc i d (@t a = 25c) 13 a

! form quantity IRF7805PBF-1 so-8 tape and reel 4000 irf7805trpbf-1 package type standard pack orderable part number base part number

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! notes: repetitive rating; pulse width limited by max. junction temperature. pulse width 300 s; duty cycle 2%. when mounted on 1 inch square copper board, t < 10 sec. typ = measured - q oss r is measured at t j of approximately 90c. devices are 100% tested to these parameters. static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v r ds(on) static drain-to-source on-resistance ??? 9.2 11 m v gs(th) gate threshold voltage 1.0 ??? 3.0 v i dss drain-to-source leakage current ??? ??? 70 ??? ??? 10 ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 q g total gate charge ??? 22 31 q gs1 pre-vth gate-to-source charge ??? 3.7 ??? q gs2 post-vth gate-to-source charge ??? 1.4 ??? q gd gate-to-drain charge ??? 6.8 ??? q sw switch charge (q gs2 + q gd ) ??? 8.2 11.5 q oss output charge ??? 3.0 3.6 nc r g gate resistance 0.5 ??? 1.7 t d(on) turn-on delay time ??? 16 ??? t r rise time ??? 20 ??? t d(off) turn-off delay time ??? 38 ??? t f fall time ??? 16 ??? diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 2.5 (body diode) i sm pulsed source current ??? ??? 106 (body diode) v sd diode forward voltage ??? ??? 1.2 v q rr reverse recovery charge ??? 88 ??? q rr(s) reverse recovery charge ??? 55 ??? (with parallel schottky) a nc nc a na nc ns v ds = 16v, v gs = 0v, i s = 7.0a v ds = 16v, v gs = 0v, i s = 7.0a i d = 7.0a v ds = v gs , i d = 250 a r g = 2 s di/dt = 700a/ s (with 10bq040) t j = 25c, i s = 7.0a, v gs = 0v showing the integral reverse p-n junction diode. mosfet symbol v ds = 16v, v gs = 0v v dd = 16v, v gs = 4.5v i d = 7.0a conditions resistive load conditions v gs = 0v, i d = 250 a v gs = 4.5v, i d = 7.0a v ds = 16v v gs = 12v v gs = -12v v gs = 5.0v v ds = 30v, v gs = 0v
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fig 3. typical rds(on) vs. gate-to-source voltage fig 2. typical gate charge vs. gate-to-source voltage fig 1. normalized on-resistance vs. temperature typical characteristics 0.1 1 10 0.4 0.5 0.6 0.7 0.8 0.9 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j fig 4. typical source-drain diode forward voltage 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) figure 5. maximum effective transient thermal impedance, junction-to-ambient

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! so-8 package details so-8 part marking e1 d e y b a a1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches mi n max dim 8 e c .0075 .0098 0.19 0.25 .025 bas ic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. outline conforms to jedec outline ms-012aa. not e s : 1. dimensioning & t olerancing per as me y14.5m-1994. 2. cont rolling dimens ion: millimeter 3. dimensions are s hown in millimet ers [inches ]. 5 dime ns ion doe s not incl ude mol d pr ot r us ions . 6 dime ns ion doe s not incl ude mol d pr ot r us ions . mold protrus ions not to exceed 0.25 [.010]. 7 dimension is t he lengt h of lead for s oldering to a subs trat e. mold protrus ions not to exceed 0.15 [.006]. 8x 1.78 [.070] dat e code (yww) xxxx int ernat ional rectifier logo f 7101 y = l as t digit of t he ye ar part number lot code ww = we e k example: t his is an irf 7101 (mos fet ) p = designates lead-free product (optional) a = assembly site code note: for the most current drawing please refer to ir website at http://www.irf.com/package/
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330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel note: for the most current drawing please refer to ir website at http://www.irf.com/package/

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! ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ ms l 1 (per je de c j-s t d-020d ?? ) rohs c ompliant yes qualification information ? qualification level industrial (per jedec jesd47f ?? guidelines) moisture sensitivity level so-8 date comments ? corrected part number from" IRF7805PBF-1" to "irf7805trpbf-1" -all pages ? removed the "IRF7805PBF-1" bulk part number from ordering information on page1 revision history 10/16/2014

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